Thermal conductivity of individual silicon nanowires

被引:1417
|
作者
Li, DY [1 ]
Wu, YY
Kim, P
Shi, L
Yang, PD
Majumdar, A
机构
[1] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[3] Columbia Univ, Dept Phys, New York, NY 10027 USA
[4] Univ Texas, Dept Mech Engn, Austin, TX 78712 USA
[5] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
关键词
D O I
10.1063/1.1616981
中图分类号
O59 [应用物理学];
学科分类号
摘要
The thermal conductivities of individual single crystalline intrinsic Si nanowires with diameters of 22, 37, 56, and 115 nm were measured using a microfabricated suspended device over a temperature range of 20-320 K. Although the nanowires had well-defined crystalline order, the thermal conductivity observed was more than two orders of magnitude lower than the bulk value. The strong diameter dependence of thermal conductivity in nanowires was ascribed to the increased phonon-boundary scattering and possible phonon spectrum modification. (C) 2003 American Institute of Physics.
引用
收藏
页码:2934 / 2936
页数:3
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