CONDUCTIVITY IMPROVEMENT OF EPITAXIAL-GROWN Mg-DOPED C60 THIN FILMS

被引：0
|
作者：
Kojima, Nobuaki [1 ]
Natori, Masato [1 ]
Suzuki, Hidetoshi [1 ]
Yamaguchi, Masafumi [1 ]
机构：
[1] Toyota Technol Inst, Tempa Ku, Nagoya, Aichi 4688511, Japan
来源：
2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3 | 2009年
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The epitaxial growth of Mg-doped C-60 films has been investigated. It is found that the epitaxial growth of Mg-doped C-60 film is enabled by using mica (001) substrate in the low Mg concentration region (Mg/C-60 molar ratio < 1). The crystal quality of the epitaxial Mg-doped C-60 film is improved drastically in compared with micro-crystalline film on glass substrate. Such drastic improvement of crystal quality in the epitaxial films results significant increase in conductivity. This result may indicate the significant increase of carrier mobility. In addition, the relation between conductivity and Mg concentration suggests the possibility that two valence electrons per Mg atom contribute the electrical conduction.
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页码：794 / 797
页数：4
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