Modulation and optoelectronic properties of GaN-based light-emitting diodes on GaN template

被引：5
|
作者：
Lin, Shan [1 ,2 ]
Cao, Haicheng [1 ,2 ]
Li, Jing [1 ,2 ]
Sun, Xuejiao [1 ,2 ]
Xiu, Huixin [3 ]
Zhao, Lixia [1 ,2 ]
机构：
[1] Chinese Acad Sci, Semicond Lighting Res & Dev Ctr, Inst Semicond, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
[3] Univ Shanghai Sci & Technol, Shanghai 200093, Peoples R China
来源：
APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 12期
基金：
中国国家自然科学基金;
关键词：
QUANTUM-WELLS; BANDWIDTH; LEDS;
D O I：
10.7567/APEX.11.122101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the modulation responses and optoelectronic properties of light-emitting diodes (LEDs) grown on free-standing (0001) GaN. These LEDs have a larger modulation bandwidth than those grown on sapphire at a higher current density, and a maximum of -3 dB modulation bandwidth of 510 MHz was achieved, which is 1.7 times larger compared to LEDs grown on sapphire. In addition, due to the lower substrate temperature, there may be an increase in the indium that is incorporated into the active region as well as the point defects of the LEDs grown on GaN, which will influence the optoelectronic properties. (C) 2018 The Japan Society of Applied Physics
引用
收藏
页数：4
相关论文
共 50 条
  • [31] Simulation of current spreading for GaN-based light-emitting diodes
    Wang, Pei
    Wei, Wei
    Cao, Bin
    Gan, Zhiyin
    Liu, Sheng
    OPTICS AND LASER TECHNOLOGY, 2010, 42 (05): : 737 - 740
  • [32] Analysis of light extraction efficiency of GaN-based light-emitting diodes
    Wang, Pei
    Cao, Bin
    Gan, Zhiyin
    Liu, Sheng
    3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 2011, 276
  • [33] Degradation of GaN-based quantum well light-emitting diodes
    Zhao, L. X.
    Thrush, E. J.
    Humphreys, C. J.
    Phillips, W. A.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (02)
  • [34] Local Doping Modulation for Improving Quantum Efficiency in GaN-Based Light-Emitting Diodes
    Wang, Naiyin
    Mei, Ting
    Yang, Xiaodong
    Li, Hao
    Zhu, Ning
    Zhang, Minjie
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (11)
  • [35] Effects of p-type GaN thickness on optical properties of GaN-based light-emitting diodes
    Xu M.-S.
    Zhang H.
    Zhou Q.-B.
    Wang H.
    Optoelectronics Letters, 2016, 12 (4) : 249 - 252
  • [36] Analytical analysis of piezoelectric field on the optoelectronic characteristics of green GaN-based light-emitting diodes
    Anwar, Abdur-Rehman
    Usman, Muhammad
    Munsif, Munaza
    Malik, Shahzeb
    Ul Islam, Noor
    FIRST IISCIENCE INTERNATIONAL CONFERENCE 2020, 2020, 11561
  • [37] Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template
    Kuo, C. H.
    Chang, L. C.
    Kuo, C. W.
    Chi, G. C.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 22 (04) : 257 - 259
  • [38] Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers
    Cai Jin-Xin
    Sun Hui-Qing
    Zheng Huan
    Zhang Pan-Jun
    Guo Zhi-You
    CHINESE PHYSICS B, 2014, 23 (05)
  • [39] Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers
    蔡金鑫
    孙慧卿
    郑欢
    张盼君
    郭志友
    Chinese Physics B, 2014, 23 (05) : 634 - 637
  • [40] Azimuthally isotropic irradiance of GaN-based light-emitting diodes with GaN microlens arrays
    Wu, Mount-Learn
    Lee, Yun-Chih
    Yang, Shih-Pu
    Lee, Po-Shen
    Chang, Jenq-Yang
    OPTICS EXPRESS, 2009, 17 (08): : 6148 - 6155
12345