Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

被引：34

作者：

Dai, Chih-Hao ^{[1
]}

Chang, Ting-Chang ^{[1
,2
,3
]}

Chu, Ann-Kuo ^{[1
]}

Kuo, Yuan-Jui ^{[1
]}

Ho, Szu-Han ^{[4
]}

Hsieh, Tien-Yu ^{[2
]}

Lo, Wen-Hung ^{[2
]}

Chen, Ching-En ^{[4
]}

Shih, Jou-Miao ^{[2
]}

Chung, Wan-Lin ^{[2
]}

Dai, Bai-Shan ^{[2
]}

Chen, Hua-Mao ^{[2
]}

Xia, Guangrui ^{[5
]}

Cheng, Osbert ^{[6
]}

Huang, Cheng Tung ^{[6
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[4] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[5] Univ British Columbia, Dept Mat Engn, Vancouver, BC V5Z 1M9, Canada

[6] United Microelect Corp, Device Dept, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 01期

关键词：

MOSFETS;

D O I：

10.1063/1.3608241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper investigates the channel hot carrier stress (CHCS) effects on gate-induced drain leakage (GIDL) current in high-k/metal-gate n-type metal-oxide-semiconductor field effect transistors. It was found that the behavior of GIDL current during CHCS is dependent upon the interfacial layer (IL) oxide thickness of high-k/metal-gate stacks. For a thinner IL, the GIDL current gradually decreases during CHCS, a result contrary to that found in a device with thicker IL. Based on the variation of GIDL current at different stress conditions, the trap-assisted band-to-band hole injection model is proposed to explain the different behavior of GIDL current for different IL thicknesses. (C) 2011 American Institute of Physics. [doi:10.1063/1.3608241]

引用

页数：3

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