First-principles insight into the interfacial properties of epitaxial Bi2O2X (X = S, Se, Te) on SrTiO3 substrates

被引:6
|
作者
Guo, Bo [1 ]
Guo, Yao [2 ]
Xu, Lianqiang [3 ]
机构
[1] Shanghai Int Studies Univ, Sch Business & Management, Shanghai 201600, Peoples R China
[2] Anyang Inst Technol, Sch Mat Sci & Engn, Henan Joint Int Res Lab Nanocomposite Sensing Mat, Anyang 455000, Peoples R China
[3] Ningxia Normal Univ, Engn Res Ctr Nanostruct & Funct Mat, Sch Phys & Elect Informat Engn, G, Guyuan 756000, Peoples R China
基金
中国国家自然科学基金;
关键词
Bismuth oxychalcogenides; Strontium titanate; First-principle calculation; Interface; HIGH-ELECTRON-MOBILITY; RAMAN-SPECTRA; PEROVSKITE;
D O I
10.1016/j.jpcs.2022.110601
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this work, we construct the Bi2O2X/SrTiO3 heterostructures and explore the geometric, electronic, optical, and transport characteristics based on density functional theory (DFT) in integration with non-equilibrium Green's function (NEGF) calculations. The influence of chalcogen elements on the Bi2O2X/SrTiO3 interface is discussed. Eighteen different interface configurations with different terminations are designed and the most stable configurations are determined. The interfaces between SrO-terminated SrTiO3 and O-terminated Bi2O2X show the highest cohesive energy and strongest charge interaction regardless of the chalcogen elements, which is the best interfacial stability. Among these interfaces, the Bi2O2S/SrTiO3 interface were found to possess the largest cohesive energy and best stability due to the fewer and lower surface states around the Fermi level. By contrast, the Bi2O2Te/SrTiO3 interface shows the largest dielectric function among these three interfacial systems leading to better optical property. In addition, the electronic transport properties reveal that Bi2O2Te/SrTiO3 has the largest transmission coefficient indicates enhanced electron transport and electric current at the interface.
引用
收藏
页数:7
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