A SiGe:C BiCMOS LNA for 94GHz band applications

被引：5
|
作者：
Severino, R. R. [1 ]
Taris, T. [1 ]
Deval, Y. [1 ]
Belot, D. [2 ]
Begueret, J. B. [1 ]
机构：
[1] Univ Bordeaux, IIMS Lab, F-33405 Talence, France
[2] ST Microelect, Site Minatec, F-38016 Grenoble, France
来源：
2010 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2010年
关键词：
millimeter-waves (mm-Waves); low noise amplifier (LNA); Bipolar/BiCMOS integrated circuits; 94GHz; imaging;
D O I：
10.1109/BIPOL.2010.5668051
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new low noise amplifier (LNA) dedicated to 94GHz band has been implemented in a 130nm BiCMOS technology intended for millimeter waves applications. The circuit is a single stage cascode amplifier utilizing transmission lines and MIM capacitors for input, output and inter-stage matching. On chip measurements show a 9.08dB maximum peak of power gain at 94.7GHz and a 1dB compression point at -14.9dBm of input power. The noise figure is 8.6dB and the power consumption is 13mW.
引用
收藏
页码：188 / 191
页数：4
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