Enhanced Light Output of GaN-Based Thin-Film Flip-Chip Light-Emitting Diodes by surface texturing using laser ablation and chemical etching

被引：0

作者：

Lin, Tseng-Hsing ^{[1
]}

Wang, Shui-Jinn ^{[1
,2
]}

Tu, Yung-Chun ^{[1
]}

Hung, Chien-Hsiung ^{[1
]}

You, Zong-Sian ^{[1
]}

Chin, Yu-Hsueh ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

来源：

2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2015年

关键词：

EXTRACTION ENHANCEMENT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A surface texturing scheme using ablation etching by KrF excimer laser irradiation and chemical wet etching is demonstrated to improve the light-extraction efficiency of GaN-based thin-film flip-chip light-emitting diodes (TFFC-LED). Both simulated and experimental results on the light emission characteristics are presented and discussed. For the TFFC-LED (die size of 1x1 mm(2)) with the proposed surface roughening scheme, enhancements in light output power (LOP) by 13.08% (12.81%) and wall-plug efficiency (WPE) by 2.87% (2.25%) at 350 mA (700 mA) as compared with that of the TFFC-LED without surface texturing are achieved experimentally.

引用

页码：123 / 124

页数：2

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