Pseudo-exponential function for MOSFETs in saturation

被引：0

作者：

Chang, CC ^{[1
]}

Liu, SI ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2000年 / 47卷 / 11期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, according to the Taylor's series expansion, two pseudo-exponential circuits were realized. The proposed circuits provide a simple method to synthesize pseudo-exponential circuits. Both of the circuits were composed of MOS transistors operating in saturation. One of the pseudo-exponential function circuits is voltage-mode and was tested using discrete components. The other one is current-mode, which is verified with the 0.8 mum CMOS process by Hspice simulations, The results confirm the feasibility of the proposed circuits.

引用

页码：1318 / 1321

页数：4

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