Pseudo-exponential function for MOSFETs in saturation

被引：0
|
作者：
Chang, CC [1 ]
Liu, SI [1 ]
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2000年 / 47卷 / 11期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, according to the Taylor's series expansion, two pseudo-exponential circuits were realized. The proposed circuits provide a simple method to synthesize pseudo-exponential circuits. Both of the circuits were composed of MOS transistors operating in saturation. One of the pseudo-exponential function circuits is voltage-mode and was tested using discrete components. The other one is current-mode, which is verified with the 0.8 mum CMOS process by Hspice simulations, The results confirm the feasibility of the proposed circuits.
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页码：1318 / 1321
页数：4
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