Analysis of some limitations of Monte Carlo crystal growth simulations

被引:0
|
作者
Izdebski, M [1 ]
Rak, M [1 ]
机构
[1] Lodz Tech Univ, Inst Phys, PL-93005 Lodz, Poland
关键词
Monte Carlo simulation; crystal growth; growth rate; layer growth; surface diffusion; two-dimensional nucleation;
D O I
10.1117/12.342978
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Monte Carlo simulations with the use of a new, efficient algorithm have been performed for a wide range of supersaturation values, The influence of both the method of calculation of the average growth rate and the size of an array on the simulation results are analysed. It is revealed that calculations of the average growth rate without the use of explicitely defined growth time lead to systematic errors and inconsistency with observed growth process, especially at low supersaturations. On the other hand the size of an array affects not only value of the average growth tate but also operating growth mechanism. Therefore, the average growth rate increases non-linearly with increasing size of an array, tending to a constant value. This effect has been observed for growth of a perfect face as well as for growth of a face consisting steps.
引用
收藏
页码:138 / 143
页数:6
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