Quick synthesis of carbon nitride films by new DC hollow cathode plasma sputtering deposition technique

High N content of carbon nitride films are quickly deposited onto Si (100) substrates at room temperature by using DC hollow cathode plasma sputtering deposition technique. The deposition rate is up to 283 nm/min at the bias voltage of 400 V. The properties of the films are characterized by using XPS, Raman (scattering) and Fourier transformation infrared (FTIR) spectroscopy. Experiments results provide direct evidences that the structures of CN films can be controlled by regulating bias voltages. The maximum sp(3)C-N concentration up to 0.73 is obtained. Raman data is used to confirm XPS results. FTIR of the films clearly show C-N and C=N components (10001800 cm(-1)) together with a tiny peak C-N (2181 cm(-1)). By reducing particle energy and substrate temperature, we have succeeded in suppressing the mechanisms of losing N-contain species during deposition, and achieved a large amount of sp(3) bonds of CN films.