A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC

被引:0
|
作者
Xu, Wenjing [1 ,2 ]
Chen, Jie [1 ]
Kuang, Zhangqu [3 ]
Zhou, Li [1 ]
Chen, Ming [1 ]
Zhang, Chengbin [1 ]
机构
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Will Semicond Co Ltd, Shanghai 201210, Peoples R China
基金
国家重点研发计划;
关键词
CMOS image sensor; 4T pinned photodiode; single-slope ADC; correlated double sample; counting method;
D O I
10.1088/1674-4926/43/8/082401
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
This paper presents a low-power high-quality CMOS image sensor (CIS) using 1.5 V 4T pinned photodiode (4T-PPD) and dual correlated double sampling (dual-CDS) column-parallel single-slope ADC. A five-finger shaped pixel layer is proposed to solve image lag caused by low-voltage 4T-PPD. Dual-CDS is used to reduce random noise and the nonuniformity between columns. Dual-mode counting method is proposed to improve circuit robustness. A prototype sensor was fabricated using a 0.11 mu m CMOS process. Measurement results show that the lag of the five-finger shaped pixel is reduced by 80% compared with the conventional rectangular pixel, the chip power consumption is only 36 mW, the dynamic range is 67.3 dB, the random noise is only 1.55 e-(rms), and the figure-of-merit is only 1.98 e-.nJ, thus realizing low-power and high-quality imaging.
引用
收藏
页数:7
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