GaN/InGaN avalanche phototransistors

被引：22

作者：

Shen, Shyh-Chiang ^{[1
,2
]}

Kao, Tsung-Ting ^{[1
,2
]}

Kim, Hee-Jin ^{[1
,2
]}

Lee, Yi-Che ^{[1
,2
]}

Kim, Jeomoh ^{[1
,2
]}

Ji, Mi-Hee ^{[1
,2
]}

Ryou, Jae-Hyun ^{[1
,2
]}

Detchprohm, Theeradetch ^{[1
,2
]}

Dupuis, Russell D. ^{[1
,2
,3
]}

机构：

[1] Georgia Inst Technol, Ctr Compound Semicond, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[3] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 03期

基金：

美国国家科学基金会;

关键词：

SEMICONDUCTOR-METAL PHOTODETECTORS; HETEROJUNCTION PHOTOTRANSISTOR; PHOTO-TRANSISTOR; CAP LAYERS; PHOTODIODES;

D O I：

10.7567/APEX.8.032101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on III-nitride (III-N) avalanche phototransistor (APT) action by illuminating ultraviolet (UV) photons onto a GaN/InGaN npn heterojunction bipolar transistor in an open-base configuration. A high responsivity of >1A/W was measured for the device operating at a collector-to-emitter voltage (V-CE) of <15V in the phototransistor mode. The carrier multiplication in the reversed biased collector leads to a photocurrent avalanche as V-CE increases. At lambda = 380 nm, the GaN/InGaN APT shows a responsivity of >68A/W at V-CE = 95V. The InGaN APT demonstrates the feasibility of using III-N bipolar transistor structures for high-sensitivity UV photodetection applications. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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