Material and device issues of GaN-based HEMTs

被引：0

作者：

Kordos, P ^{[1
]}

Alam, A ^{[1
]}

Betko, J ^{[1
]}

Chow, PP ^{[1
]}

Heuken, M ^{[1
]}

Javorka, P ^{[1
]}

Kocan, M ^{[1
]}

Marso, M ^{[1
]}

Morvic, M ^{[1
]}

Van Hove, JM ^{[1
]}

机构：

[1] Res Ctr Julich, Inst Thin Film & Ion Technol, D-52425 Julich, Germany

来源：

8TH IEEE INTERNATIONAL SYMPOSIUM ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 2000年

关键词：

D O I：

10.1109/EDMO.2000.919030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Material structure and device processing issues related to the performance of high-frequency and high-power AlGaN/GaN HEMTs are discussed. Results on selected issues like transport properties of highly resistive buffer layers, persistent photoconductivity in 2DEG structures, preparation and properties of ohmic and Schottky-barrier contacts and HEMT devices, as well as analysis of deep traps in HEMTs are addressed in this article in details.

引用

页码：61 / 66

页数：6

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