Material and device issues of GaN-based HEMTs

被引：0
|
作者：
Kordos, P [1 ]
Alam, A [1 ]
Betko, J [1 ]
Chow, PP [1 ]
Heuken, M [1 ]
Javorka, P [1 ]
Kocan, M [1 ]
Marso, M [1 ]
Morvic, M [1 ]
Van Hove, JM [1 ]
机构：
[1] Res Ctr Julich, Inst Thin Film & Ion Technol, D-52425 Julich, Germany
来源：
8TH IEEE INTERNATIONAL SYMPOSIUM ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 2000年
关键词：
D O I：
10.1109/EDMO.2000.919030
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Material structure and device processing issues related to the performance of high-frequency and high-power AlGaN/GaN HEMTs are discussed. Results on selected issues like transport properties of highly resistive buffer layers, persistent photoconductivity in 2DEG structures, preparation and properties of ohmic and Schottky-barrier contacts and HEMT devices, as well as analysis of deep traps in HEMTs are addressed in this article in details.
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收藏
页码：61 / 66
页数：6
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