Determination of the piezoresistivity of microcrystalline silicon-germanium and application to a pressure sensor

被引：0

作者：

Lenci, S. ^{[1
,2
]}

Gonzalez, P. ^{[2
,3
]}

De Meyer, K. ^{[2
,3
]}

Van Hoof, R. ^{[2
]}

Frederickx, D. ^{[2
]}

Witvrouw, A. ^{[2
]}

机构：

[1] Dipartimento Ingn Informaz, Pisa, Italy

[2] IMEC, Leuven, Belgium

[3] Katholieke Univ Leuven, Leuven, Belgium

来源：

MEMS 2008: 21ST IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports for the first time the experimentally obtained piezoresistive coefficients of microcrystalline silicon-germanium (mu cSiGe), which is proposed as a new structural material for piezoresistive Micro-ElectroMechanical Systems (MEMS). We measure the resistance variation of several piezoresistors under a uniform and uniaxial stress provided by a four point bending (4PB) fixture. The stress values are determined both by theory and from finite elements (FE) simulations. FE simulations are done as well to investigate the potential of using mu cSiGe for a piezoresistive pressure sensor application.

引用

页码：427 / +

页数：2

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