Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing

被引：8
|
作者：
Hong, S
Foo, YL
Bratland, KA
Spila, T
Ohmori, K
Sardela, MR
Greene, JE
Yoon, E
机构：
[1] Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA
[2] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
[3] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 21期
关键词：
D O I：
10.1063/1.1629792
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Atomically flat, fully strained Si1-xGex layers with thicknesses ranging from 8 to 180 nm were grown on Si(001) at 450 degreesC by gas-source molecular beam epitaxy from Ge2H6/Si2H6 mixtures. We show that smooth, relaxed alloy layers are obtained, without the necessity of using several-microns-thick compositionally graded layers, via in situ rapid thermal annealing of fully strained Si1-xGex(001) layers at 1000 degreesC for 10 s. Relaxed Si0.75Ge0.25(001) layers with thicknesses of 100-180 nm were found to have surface widths of similar or equal to5 nm, comparable to the best results obtained using thick graded buffer layers. (C) 2003 American Institute of Physics.
引用
收藏
页码：4321 / 4323
页数：3
相关论文
共 50 条
  • [31] Growth of Si0.75Ge0.25 alloy nanowires in a separated H-field by microwave processing
    Dube, Charu Lata
    Kashyap, Subhash C.
    Dube, D. C.
    Agarwal, D. K.
    APPLIED PHYSICS LETTERS, 2009, 94 (21)
  • [32] Atomic H-mediated (Si14/Ge1)20 superlattice buffers for the growth of Si0.75Ge0.25 alloy layers with low residual strain
    Rahman, MM
    Tambo, T
    Tatsuyama, C
    THIN SOLID FILMS, 2004, 464 : 85 - 89
  • [33] Dislocation reduction of MBE-grown Ge on Si (001) by in situ thermal annealing
    Fukuda, Yukio
    Kohama, Yoshitaka
    Seki, Masahiro
    Ohmachi, Yoshiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (09): : 1591 - 1593
  • [34] MBE grown short-period (Sim/Gen)N superlattices (SSLs) and its effect on the growth of uniform Si0.75Ge0.25/(SSLs)/Si(001) systems
    Rahman, MM
    Kurumatani, K
    Matada, H
    Tambo, T
    Tatsuyama, C
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3): : 252 - 256
  • [35] Reduction in threading dislocation density in ge epitaxial layers grown on Si(001) substrates by using rapid thermal annealing
    Keun Wook Shin
    Sung Hyun Park
    Sehun Park
    Euijoon Yoon
    Sewoung Oh
    Yongjo Park
    Journal of the Korean Physical Society, 2015, 67 : 1646 - 1650
  • [36] Reduction in threading dislocation density in ge epitaxial layers grown on Si(001) substrates by using rapid thermal annealing
    Shin, Keun Wook
    Park, Sung Hyun
    Park, Sehun
    Yoon, Euijoon
    Oh, Sewoung
    Park, Yongjo
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2015, 67 (09) : 1646 - 1650
  • [37] Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy
    Yurasov, D. V.
    Bobrov, A. I.
    Daniltsev, V. M.
    Novikov, A. V.
    Pavlov, D. A.
    Skorokhodov, E. V.
    Shaleev, M. V.
    Yunin, P. A.
    SEMICONDUCTORS, 2015, 49 (11) : 1415 - 1420
  • [38] Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy
    D. V. Yurasov
    A. I. Bobrov
    V. M. Daniltsev
    A. V. Novikov
    D. A. Pavlov
    E. V. Skorokhodov
    M. V. Shaleev
    P. A. Yunin
    Semiconductors, 2015, 49 : 1415 - 1420
  • [39] Influence of a Si layer intercalated between Si0.75Ge0.25 and Ni on the behavior of the resulting NiSi1-uGeu film
    Seger, J
    Jarmar, T
    Ericson, F
    Smith, U
    Hållstedt, J
    Zhang, ZB
    Zhang, SL
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (12) : 7179 - 7182
  • [40] High quality relaxed Ge layers grown directly on a Si(001) substrate
    Shah, V. A.
    Dobbie, A.
    Myronov, M.
    Leadley, D. R.
    SOLID-STATE ELECTRONICS, 2011, 62 (01) : 189 - 194
12345