Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing

被引：8
|
作者：
Hong, S
Foo, YL
Bratland, KA
Spila, T
Ohmori, K
Sardela, MR
Greene, JE
Yoon, E
机构：
[1] Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA
[2] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
[3] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 21期
关键词：
D O I：
10.1063/1.1629792
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Atomically flat, fully strained Si1-xGex layers with thicknesses ranging from 8 to 180 nm were grown on Si(001) at 450 degreesC by gas-source molecular beam epitaxy from Ge2H6/Si2H6 mixtures. We show that smooth, relaxed alloy layers are obtained, without the necessity of using several-microns-thick compositionally graded layers, via in situ rapid thermal annealing of fully strained Si1-xGex(001) layers at 1000 degreesC for 10 s. Relaxed Si0.75Ge0.25(001) layers with thicknesses of 100-180 nm were found to have surface widths of similar or equal to5 nm, comparable to the best results obtained using thick graded buffer layers. (C) 2003 American Institute of Physics.
引用
收藏
页码：4321 / 4323
页数：3
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