Multilevel Resistive Switching in HfOx/TiOx/HfOx/TiOx Multilayer-based RRAM with High Reliability

被引：0
|
作者：
Ma, Wenjia [1 ]
Liu, Lifeng [1 ]
Wang, Yiran [1 ]
Chen, Zhe [1 ]
Chen, Bing [1 ]
Gao, Bin [1 ]
Liu, Xiaoyan [1 ]
Kang, Jinfeng [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Multilevel cell (MLC) characteristics of HfOx/TiOx/HfOx/TiOx multilayer -based RRAM were studied for the data storage application. The multilevel resistive switching operation was obtained by controlling the reset pulse voltage of the multilayer-based RRAM. We have demonstrated 8-level resistive switching behavior. The reliability of the MLC operation has been examined, about 10(4) s of data retention at 150 degrees C is achieved, Sufficient window margin is achieved even the HRS decreases with the increasing temperature from 30 to 150 degrees C.
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