Toluene gas is the most toxic and affects the respiratory system of humans, and thereby, its detection at lower levels is an important task. Herein, we report a room temperature-operatable indium oxide-based chemiresistive gas sensor, which detects 50 ppm toluene vapors. Nanocrystalline indium oxide (In2O3) films were sprayed on a pre-cleaned glass substrate using a cost-effective spray pyrolysis method at different substrate temperatures in the range of 350-500 degrees C. The X-ray diffraction studies confirmed that the sprayed thin films, which were deposited at different substrate temperatures, exhibit a cubic structure. The preferred orientation was aligned along the (222) orientation. Average crystallite size calculation based on the Scherrer formula indicates that the crystallite size increases with the enhancement of substrate temperature. FESEM analysis showed that the indium oxide thin films possess uniform grain distribution, which persists over the entire substrate. As the substrate temperature is increased, a partial agglomeration in the film morphology was observed. The deposited film's nanostructured nature was confirmed by transmission electron microscopy, and the polycrystalline nature was confirmed from the selected area electron diffraction pattern. Root mean square roughness of the samples was determined from the atomic force microscopy studies. From the Raman spectra, characteristic vibrational modes appeared at 558.61, 802.85, and 1097.18 cm(-1) in all the samples, which confirms the cubic structure of indium oxide thin films. Photoluminescence emission spectra have been recorded with an excitation wavelength of 280 nm. The optical band gap was measured using the Tauc plot. The band gap was found to decrease with an increase in the substrate temperature. The gas-sensing performance of indium oxide films sprayed at various substrate temperatures has demonstrated a better response toward 50 ppm toluene gas at room temperature with good stability, and the response and recovery times were determined using a transient response curve.
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CSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, SpainCSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, Spain
Gich, Marti
Fina, Ignasi
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Max Planck Inst Microstruct Phys, D-06120 Halle, GermanyCSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, Spain
Fina, Ignasi
Morelli, Alessio
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Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
Inst Phys ASCR, Dept Dielect, Prague 18221, Czech RepublicCSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, Spain
Morelli, Alessio
Sanchez, Florencio
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CSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, SpainCSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, Spain
Sanchez, Florencio
Alexe, Marin
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Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, EnglandCSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, Spain
Alexe, Marin
Gazquez, Jaume
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CSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, SpainCSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, Spain
Gazquez, Jaume
Fontcuberta, Josep
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CSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, SpainCSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, Spain
Fontcuberta, Josep
Roig, Anna
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CSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, SpainCSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, Spain