INVESTIGATION OF SiO2 ON AlGaAs PREPARED BY LIQUID PHASE DEPOSITION

被引：0
|
作者：
Lee, Kuan-Wei [1 ]
Huang, Jung-Sheng [1 ]
Lu, Yu-Lin [1 ]
Lee, Fang-Ming [2 ]
Lin, Hsien-Cheng [2 ]
Huang, Jian-Jun [2 ]
Wang, Yeong-Her [2 ]
机构：
[1] I Shou Univ, Dept Elect Engn, Kaohsiung 840, Taiwan
[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan
来源：
2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2010年
关键词：
CHEMICAL-VAPOR-DEPOSITION; SILICON DIOXIDE FILMS; GAN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The liquid phase deposition (LPD) was used to deposit silicon oxide (SiO2) layer on AlGaAs near room temperature. The LPD method is not only simple but also can obtain the SiO2 very economically. Both the aqueous solution of hydro-fluosilicic acid (H2SiF6) and boric acid (H3BO3) were used for the LPD solution. After rapid temperature annealing (RTA) at 300 degrees C for 1 min, the leakage current density is similar to 4.24 x 10(-7) A/cm(2) at 1 MV/cm, and the interface trap density is similar to 1.7 x 10(11) cm(-2)eV(-1) for the LPD-SiO2 thickness of 29 nm.
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页数：4
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