Quantitative optimization of epitaxial heterostructures for near IR high-power lasers

被引：0
|
作者：
Ladugin, M. A. [1 ]
Marmalyuk, A. A. [1 ]
机构：
[1] JSC Sigm Plus, Moscow, Russia
来源：
2018 INTERNATIONAL CONFERENCE LASER OPTICS (ICLO 2018) | 2018年
关键词：
quantum well heterostructures; high power lasers; WPE; near IR spectral range; MOCVD;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this paper, we present the results of careful analyses and calculations aimed at the development of the high power laser diodes, bars and arrays operating in near IR spectral region and based on quantum well A3B5 heterostructures with increased optical power and high wall-plug efficiency (WPE 70%). An increase in the internal quantum and external differential efficiency, a decrease in the threshold current, the cut-off voltage and series resistance, together allowed improving the output parameters of the semiconductor emitters.
引用
收藏
页码：179 / 179
页数：1
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