Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy

被引:10
|
作者
Na, JH
Taylor, RA
Rice, JH
Robinson, JW
Lee, KH
Park, YS
Park, CM
Kang, TW
机构
[1] Univ Oxford, Dept Phys, Oxford OX1 3PU, England
[2] Dongguk Univ, Quantumfunct Semiconductor Res Ctr, Seoul 100715, South Korea
关键词
D O I
10.1063/1.1885187
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the behavior of excitons in GaN nanocolumns using time-integrated and time-resolved micro-photoluminescence measurements. In the weak confinement limit, the model of fractional-dimensional space gives an intermediate dimensionality of 2.14 for GaN nanocolumns, with an average diameter of 80 nm. Enhanced exciton and donor binding energies are deduced from a fractional-dimensional model and a phenomenological description. Time-integrated photoluminescence spectra as a function of temperature show a curved emission shift. Recombination dynamics are deduced from the temperature dependence of the PL efficiency and decay times. (C) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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