Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy

被引:10
|
作者
Na, JH
Taylor, RA
Rice, JH
Robinson, JW
Lee, KH
Park, YS
Park, CM
Kang, TW
机构
[1] Univ Oxford, Dept Phys, Oxford OX1 3PU, England
[2] Dongguk Univ, Quantumfunct Semiconductor Res Ctr, Seoul 100715, South Korea
关键词
D O I
10.1063/1.1885187
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the behavior of excitons in GaN nanocolumns using time-integrated and time-resolved micro-photoluminescence measurements. In the weak confinement limit, the model of fractional-dimensional space gives an intermediate dimensionality of 2.14 for GaN nanocolumns, with an average diameter of 80 nm. Enhanced exciton and donor binding energies are deduced from a fractional-dimensional model and a phenomenological description. Time-integrated photoluminescence spectra as a function of temperature show a curved emission shift. Recombination dynamics are deduced from the temperature dependence of the PL efficiency and decay times. (C) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
相关论文
共 50 条
  • [1] TWO-DIMENSIONAL BEHAVIOR OF MOLECULAR-BEAM EPITAXY GROWN HGTE
    JUSTICE, RJ
    SEILER, DG
    ZAWADZKI, W
    KOESTNER, RJ
    GOODWIN, MW
    APPLIED PHYSICS LETTERS, 1988, 52 (16) : 1332 - 1334
  • [2] GaN nanocolumns on Si(III) grown by molecular beam epitaxy
    Calarco, R
    Marso, K
    Meijers, R
    Richter, T
    Aykanat, AI
    Stoica, T
    Lüth, H
    ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004, : 9 - 12
  • [3] Transport properties of the two-dimensional electron gas in GaN/AlGaN heterostructures grown by ammonia molecular-beam epitaxy
    Pogosov, A. G.
    Budantsev, M. V.
    Lavrov, R. A.
    Mansurov, V. G.
    Nikitin, A. Yu.
    Preobrazhenskii, V. V.
    Zhuravlev, K. S.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (09): : 2186 - 2189
  • [4] Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy
    Reynolds, DC
    Look, DC
    Kim, W
    Aktas, O
    Botchkarev, A
    Salvador, A
    Morkoc, H
    Talwar, DN
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (01) : 594 - 596
  • [5] Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy
    Cerutti, L.
    Ristic, J.
    Fernandez-Garrido, S.
    Calleja, E.
    Trampert, A.
    Ploog, K. H.
    Lazic, S.
    Calleja, J. M.
    APPLIED PHYSICS LETTERS, 2006, 88 (21)
  • [6] Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy
    Calleja, E
    Sánchez-García, MA
    Sánchez, FJ
    Calle, F
    Naranjo, FB
    Muñoz, E
    Jahn, U
    Ploog, K
    PHYSICAL REVIEW B, 2000, 62 (24) : 16826 - 16834
  • [7] TWO-DIMENSIONAL METALLIC BEHAVIOR IN SEMICONDUCTORS MADE USING MOLECULAR-BEAM EPITAXY
    HJALMARSON, HP
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 289 - 289
  • [8] EXCITONIC RECOMBINATION IN GAN GROWN BY MOLECULAR-BEAM EPITAXY
    SMITH, M
    CHEN, GD
    LI, JZ
    LIN, JY
    JIANG, HX
    SALVADOR, A
    KIM, WK
    AKTAS, O
    BOTCHKAREV, A
    MORKOC, H
    APPLIED PHYSICS LETTERS, 1995, 67 (23) : 3387 - 3389
  • [9] Magnesium incorporation in GaN grown by molecular-beam epitaxy
    Ptak, AJ
    Myers, TH
    Romano, LT
    Van de Walle, CG
    Northrup, JE
    APPLIED PHYSICS LETTERS, 2001, 78 (03) : 285 - 287
  • [10] AlGaN nanocolumns and AlGaN/GaN/AlGaN nanostructures grown by molecular beam epitaxy
    Ristic, J
    Sánchez-García, MA
    Ulloa, JM
    Calleja, E
    Sanchez-Páramo, J
    Calleja, JM
    Jahn, U
    Trampert, A
    Ploog, KH
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 234 (03): : 717 - 721