Theory on STM images of an Si(001) surface with steps

被引：8
|
作者：
Nakamura, Y [1 ]
Kawai, H [1 ]
Nakayama, M [1 ]
机构：
[1] KYUSHU UNIV, FAC SCI, DEPT PHYS, FUKUOKA 810, JAPAN
来源：
SURFACE SCIENCE | 1996年 / 357卷 / 1-3期
关键词：
computer simulations; Ising models; low index single crystal surfaces; scanning tunneling microscopy; silicon; stepped single crystal surfaces; surface relaxation and reconstruction;
D O I：
10.1016/0039-6028(96)00210-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The influence of steps on the arrangement of the buckling of dimers of an Si(001) surface has been studied by Monte Carlo simulation. Coupling constants for the buckling of the dimers were determined by first-principles calculations. We treated the S-A step for the buckling of dimers by the free boundary condition, It was found that the fluctuation extends over a long distance from the edge in the temperature region of the transition to the c(4 x 2) structure. The influence of kink in the S-A step line was also studied. STM images were calculated and it was found that asymmetric images are locally induced in the dimer row connected to the kink. The calculated images agreed well with observed images.
引用
收藏
页码：500 / 503
页数：4
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