Cross-sectional scanning tunneling microscope (STM) study of Mn-doped GaAs layers

被引：0

作者：

Tsuruoka, T ^{[1
]}

Tanimoto, R ^{[1
]}

Tachikawa, N ^{[1
]}

Ushioda, S ^{[1
]}

Matsukura, F ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using cross-sectional scanning tunneling microscopy (XSTM), we have identified the dopant atoms and point defects in Mn-doped GaAs layers with different dopant concentrations. The electrically activated Mn acceptor concentration deduced from the STM images agrees well with the hole concentration determined by Hall measurements.

引用

页码：244 / 245

页数：2

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