Cross-sectional scanning tunneling microscope (STM) study of Mn-doped GaAs layers

被引：0
|
作者：
Tsuruoka, T [1 ]
Tanimoto, R [1 ]
Tachikawa, N [1 ]
Ushioda, S [1 ]
Matsukura, F [1 ]
Ohno, H [1 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using cross-sectional scanning tunneling microscopy (XSTM), we have identified the dopant atoms and point defects in Mn-doped GaAs layers with different dopant concentrations. The electrically activated Mn acceptor concentration deduced from the STM images agrees well with the hole concentration determined by Hall measurements.
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页码：244 / 245
页数：2
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