On the role of mobile nanoclusters in 2D island nucleation on Si(111)-(7x7) surface

被引:12
|
作者
Rogilo, D. I. [1 ,2 ]
Fedina, L. I. [1 ,2 ]
Kosolobov, S. S. [1 ]
Latyshev, A. V. [1 ,2 ]
机构
[1] RAS, Rzhanov Inst Semicond Phys SB, Acad Lavrentev Ave 13, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Pirogov St 2, Novosibirsk 630090, Russia
基金
俄罗斯科学基金会;
关键词
Silicon; Epitaxial growth; Surface diffusion; Nucleation; Superstructure; SI MAGIC CLUSTERS; MOLECULAR-BEAM EPITAXY; THIN-FILM GROWTH; X; 7; SURFACE; 7X7; RECONSTRUCTION; STEP PERMEABILITY; LIMITED KINETICS; X-1; UHV-REM; DIFFUSION;
D O I
10.1016/j.susc.2017.09.009
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Two-dimensional (2D) Si island nucleation has been studied by in situ reflection electron microscopy within a wide temperature range (650-1090 degrees C) on large-scale (similar to 10-100 mu m) terraces to exclude the impact of step permeability and adatom sink to steps. The dependence of 2D island concentration N-2D on substrate temperature T and Si deposition rate R displays N-2D alpha R(chi)exp(E-2D/kT) scaling which parameters change from chi approximate to 0.81, E-2D approximate to 1.02eV to chi approximate to 0.5, E-2D approximate to 1.8eV when Si(111) surface converts from (1x1) structure to (7x7) reconstruction. We propose that this strong E-2D rise accompanied by chi reduction is caused by the change of dominating diffusing particles from adatoms to reconstruction induced nanodusters. Using a rate-equation model developed to account the dynamics of both diffusing species on the Si(111)-(7x7) surface, we show that a stable nucleus of a 2D island appears when two mobile nanoclusters merge together while nucleation kinetics is limited by their attachment to island edges. (c) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:1 / 7
页数:7
相关论文
共 50 条
  • [31] QUESTIONS ABOUT THE SI(111)-(7X7) RECONSTRUCTED SURFACE
    OHDOMARI, I
    SURFACE SCIENCE, 1990, 227 (03) : L125 - L129
  • [32] CLUSTER FORMATION OF LI ON THE SI(111)7X7 SURFACE
    HASEGAWA, Y
    KAMIYA, I
    HASHIZUME, T
    SAKURAI, T
    TOCHIHARA, H
    KUBOTA, M
    MURATA, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01): : 238 - 240
  • [33] EVALUATION OF RECENT SI(111)-(7X7)SURFACE MODELS
    MILLER, DJ
    HANEMAN, D
    SURFACE SCIENCE, 1981, 104 (2-3) : L237 - L244
  • [34] Adatom potential relief on Si(111)-7x7 surface
    Vershinin, AV
    Zverev, AV
    Shwartz, NL
    Yanovitskaja, ZS
    2004 INTERNATIONAL SIBERIAN WORKSHOPS AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, EDM 2004, PROCEEDINGS, 2004, : 62 - 65
  • [35] THE STABILITY OF STRUCTURE MODELS OF SI(111)7X7 SURFACE
    LIU, HZ
    LI, ZY
    CHINESE PHYSICS, 1990, 10 (03): : 632 - 641
  • [36] Local cleavage of the Si(111)7x7 surface by STM
    Pascual, JI
    Rogero, C
    Gómez-Herrero, J
    Baró, AM
    PHYSICAL REVIEW B, 1999, 59 (15): : 9768 - 9770
  • [37] STUDY OF NIOBIUM INTERACTION WITH THE SI(111)7X7 SURFACE
    OUSTRY, A
    BERTY, J
    CAUMONT, M
    DAVID, MJ
    JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES, 1989, 14 (06): : 427 - 436
  • [38] Alkali metal adsorption on the Si(111)-(7X7) surface
    Wu, KH
    Fujikawa, Y
    Takamura, Y
    Sakurai, T
    CHINESE JOURNAL OF PHYSICS, 2005, 43 (01) : 197 - 211
  • [39] LEED ANALYSIS OF SI(111)-(7X7) SURFACE MODELS
    MILLER, DJ
    HANEMAN, D
    WALKER, LW
    SURFACE SCIENCE, 1980, 94 (2-3) : 555 - 563
  • [40] Formation of thallium islands on the Si(111)-7x7 surface
    Kim, ND
    Hwang, CG
    Chung, JW
    Kim, TC
    Noh, DY
    PHYSICAL REVIEW B, 2005, 72 (03):