On the role of mobile nanoclusters in 2D island nucleation on Si(111)-(7x7) surface

被引:12
|
作者
Rogilo, D. I. [1 ,2 ]
Fedina, L. I. [1 ,2 ]
Kosolobov, S. S. [1 ]
Latyshev, A. V. [1 ,2 ]
机构
[1] RAS, Rzhanov Inst Semicond Phys SB, Acad Lavrentev Ave 13, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Pirogov St 2, Novosibirsk 630090, Russia
基金
俄罗斯科学基金会;
关键词
Silicon; Epitaxial growth; Surface diffusion; Nucleation; Superstructure; SI MAGIC CLUSTERS; MOLECULAR-BEAM EPITAXY; THIN-FILM GROWTH; X; 7; SURFACE; 7X7; RECONSTRUCTION; STEP PERMEABILITY; LIMITED KINETICS; X-1; UHV-REM; DIFFUSION;
D O I
10.1016/j.susc.2017.09.009
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Two-dimensional (2D) Si island nucleation has been studied by in situ reflection electron microscopy within a wide temperature range (650-1090 degrees C) on large-scale (similar to 10-100 mu m) terraces to exclude the impact of step permeability and adatom sink to steps. The dependence of 2D island concentration N-2D on substrate temperature T and Si deposition rate R displays N-2D alpha R(chi)exp(E-2D/kT) scaling which parameters change from chi approximate to 0.81, E-2D approximate to 1.02eV to chi approximate to 0.5, E-2D approximate to 1.8eV when Si(111) surface converts from (1x1) structure to (7x7) reconstruction. We propose that this strong E-2D rise accompanied by chi reduction is caused by the change of dominating diffusing particles from adatoms to reconstruction induced nanodusters. Using a rate-equation model developed to account the dynamics of both diffusing species on the Si(111)-(7x7) surface, we show that a stable nucleus of a 2D island appears when two mobile nanoclusters merge together while nucleation kinetics is limited by their attachment to island edges. (c) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:1 / 7
页数:7
相关论文
共 50 条
  • [1] Formation and electronic states of In nanoclusters on the Si(111)-7X7 surface
    Byun, Jung Hoon
    Shin, Jin Sung
    Kang, Pil Gyu
    Jeong, Hojin
    Yeom, Han Woong
    PHYSICAL REVIEW B, 2009, 79 (23)
  • [2] Nucleation and growth of Ge nanoclusters on the Si(111)-(7x7) surface studied by scanning tunneling microscopy
    Zhang, Yongping
    Chen, Zhiqian
    Xu, Guo Qin
    Tok, Eng Soon
    SURFACE AND INTERFACE ANALYSIS, 2015, 47 (02) : 222 - 226
  • [3] Atomic structure of the Ga nanoclusters on Si(111)-(7x7)
    Ohtake, A
    PHYSICAL REVIEW B, 2006, 73 (03):
  • [4] Fermi surface of Si(111)7X7
    Losio, R
    Altmann, KN
    Himpsel, FJ
    PHYSICAL REVIEW B, 2000, 61 (16) : 10845 - 10853
  • [5] Vanadium nanoclusters on Si(111) 7x7 surface studied by scanning tunneling microscopy
    Stavale, F.
    Achete, C. A.
    Niehus, H.
    SURFACE SCIENCE, 2007, 601 (21) : 4881 - 4887
  • [6] NUCLEATION AND GROWTH OF CU AND AG ON SI(111)7X7
    TOSCH, S
    NEDDERMEYER, H
    JOURNAL OF MICROSCOPY-OXFORD, 1988, 152 : 415 - 422
  • [7] 2D island nucleation controlled by nanocluster diffusion during Si and Ge epitaxy on Si(111)-(7 x 7) surface at elevated temperatures
    Petrov, A. S.
    Rogilo, D. I.
    Sheglov, D. V.
    Latyshev, A. V.
    JOURNAL OF CRYSTAL GROWTH, 2020, 531
  • [8] Capture zone scaling in 2D Ge island nucleation on Si(111)-(7 x 7) at elevated temperatures
    Makeeva, A. A.
    Petrov, A. S.
    Rogilo, D. I.
    Sheglov, D. V.
    Latyshev, A. V.
    JOURNAL OF CRYSTAL GROWTH, 2024, 647
  • [9] Ab initio study of thallium nanoclusters on Si(111)-7x7
    Lee, Geunsik
    Hwang, Choon Gyu
    Kim, Nam Dong
    Chung, Jinwook
    Kim, Jai Sam
    Lee, Sik
    PHYSICAL REVIEW B, 2007, 76 (24)
  • [10] Si nucleation on Si(111)-7 x 7:: From cluster pairs to 2D islands
    Fillmonov, S. N.
    Cherepanov, V.
    Hervieu, Yu. Yu.
    Voigtlaender, B.
    SURFACE SCIENCE, 2007, 601 (18) : 3876 - 3880