Lattice site location of thulium and erbium implanted GaAs

被引：5
|
作者：
Alves, E
da Silva, MF
Soares, JC
Henry, MO
Gwilliam, R
Sealy, BJ
Freitag, K
Vianden, R
Stievenard, D
机构：
[1] Inst Tecnol & Nucl ITN, P-2685 Sacavem, Portugal
[2] Univ Lisbon, Ctr Fis Nucl, P-1699 Lisbon, Portugal
[3] Dublin City Univ, Sch Phys Sci, Dublin 9, Ireland
[4] Univ Surrey, Dept Elect & Elect Engn, Guildford GU2 5HX, Surrey, England
[5] Univ Bonn, Inst Strahlen & Kernphys, D-56115 Bonn, Germany
[6] Inst Super Elect N, F-59046 Lille, France
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1998年 / 136卷
关键词：
lattice location; GaAs doping; ErAs precipitates;
D O I：
10.1016/S0168-583X(97)00715-5
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The lattice site location of Tm and Er implanted in GaAs were studied using the RBS/channeling technique. For implanted doses up to 10(14) cm(-2) both elements show nearly 100% substitutionality in the GaAs lattice. Further increasing the Er concentration causes a fraction to occupy an interstitial regular site. Axial channeling measurements along planar directions show that Er forms ErAs precipitates. The angular scans are compared with Monte Carlo simulations and the Er fractions in the different lattice sites are calculated. With the incorporation of oxygen in the GaAs matrix the fraction of Er in substitutional sites increases. Taking into account these results the photoluminescence (PL) behavior of Er in these samples is discussed and results obtained with Er doped GaAs grown by Molecular Beam Epitaxy are understood. (C) 1998 Elsevier Science B.V.
引用
收藏
页码：421 / 425
页数：5
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