Lattice site location of thulium and erbium implanted GaAs

被引：0
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作者：
Alves, E. [1 ]
da Silva, M.F. [1 ]
Soares, J.C. [1 ]
Henry, M.O. [1 ]
Gwilliam, R. [1 ]
Sealy, B.J. [1 ]
Freitag, K. [1 ]
Vianden, R. [1 ]
Stievenard, D. [1 ]
机构：
[1] Inst Tecnologico e Nuclear, Sacavem, Portugal
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1998年 / 136-138卷
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页码：421 / 425
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