VLS Growth of Cubic Structure Al-Doped SnO2 Nanowire Using Al/Pd/Au Catalyst Diffusion

被引：1

作者：

Hsu, Cheng-Liang ^{[1
]}

Lin, Yan-Ru ^{[2
]}

Hsueh, Ting-Jen ^{[3
]}

机构：

[1] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan

[2] MingChi Univ Technol, Dept Mat Engn, New Taipei City 243, Taiwan

[3] Natl Nano Device Labs, Tainan 741, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2012年 / 159卷 / 05期

关键词：

D O I：

10.1149/2.068205jes

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This investigation reports the synthesis of high-density, single-crystal Al-doped SnO2 nanowires on sapphire substrate by vapor-liquid-solid method. The length of and diameter of the SnO2:Al NWs is 7 similar to 8 mu m and 50-300 nm, respectively. The Al is protected by the Au/Pd in the drop of catalyst, it avoids oxidation and continuously provide Al to the SnO nanowires. The Al-doped concentrations were approximately 2.62 atomic%. Al induces a change in SnO2 crystals from a tetragonal rutile to cubic structure. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.068205jes]

引用

页码：K152 / K155

页数：4

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