A 220-261 GHz Frequency Multiplier Chain (x18) With 8-dBm Peak Output Power in 130-nm SiGe

被引：10

作者：

Turkmen, Esref ^{[1
,2
]}

Aksoyak, Ibrahim Kagan ^{[2
]}

Debski, Wojciech ^{[1
]}

Winkler, Wolfgang ^{[1
]}

Cagri Ulusoy, Ahmet ^{[2
]}

机构：

[1] Silicon Radar GmbH, D-15236 Frankfurt, Oder, Germany

[2] Karlsruhe Inst Technol, Inst Radio Frequency Engn & Elect, D-76128 Karlsruhe, Germany

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2022年 / 32卷 / 07期

关键词：

Harmonic analysis; Power generation; Silicon germanium; BiCMOS integrated circuits; Band-pass filters; Power system harmonics; Power measurement; BiCMOS; frequency doubler; frequency tripler; multiplier chain; SiGe;

D O I：

10.1109/LMWC.2022.3154352

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a 220-261-GHz frequency multiplier-by-18 chain in a 130-nm SiGe BiCMOS technology. It consists of three amplifiers (12-15, 110-135, and 216-270 GHz), two frequency triplers (36-45 and 108-135 GHz), a third-order Chebyshev bandpass filter (36-45 GHz), and a modified Gilbert-cell-based frequency doubler (216-270 GHz). The peak output power is about 8 dBm at 240 GHz with a 3-dB bandwidth of 41 GHz for an input power of -7 dBm. The unwanted harmonics are suppressed more than 25 dBc over the frequency range of interest. It consumes a dc current of 114.7 mA from a supply voltage of 3.3 V in the quiescent operation and drains a current of 130 mA for an input power of -7 dBm, which results in a drain efficiency of 1.47%. The total circuit occupies an area of 0.58 mm(2) (1.35 mm x 0.43 mm).

引用

页码：895 / 898

页数：4

共 35 条

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