A Skyrmion Diode Based on Skyrmion Hall Effect

被引：26
|
作者：
Feng, Youhua [1 ]
Zhang, Xi [1 ]
Zhao, Guoping [2 ]
Xiang, Gang [1 ]
机构：
[1] Sichuan Univ, Coll Phys, Chengdu 610065, Peoples R China
[2] Sichuan Normal Univ, Coll Phys & Elect Engn, Chengdu 610101, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Micromagnetics; Current density; Semiconductor diodes; Force; Magnetic domains; Magnetic tunneling; Magnetic multilayers; Magnetic skyrmion; micromagnetic simulation; skyrmion diode; spintronic device; MAGNETIC SKYRMIONS; DYNAMICS; MOTION;
D O I：
10.1109/TED.2021.3138837
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The skyrmion Hall effect (SkHE) is usually considered as a drawback in technological applications based on magnetic skyrmion and much effort has been made to suppress the SkHE. Instead, here we demonstrate that the SkHE can be used to design a useful skyrmion diode. Micromagnetic simulations show that, in a stripe-shaped device with a lateral asymmetry, diode-like forward breakover and reverse cutoff functions can be realized based on the current-induced motion of skyrmion. Our results may suggest a promising pathway toward the development of spintronic devices based on unidirectional skyrmion transport.
引用
收藏
页码：1293 / 1297
页数：5
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