Oxidation of organic films by beams of hydroxyl radicals

被引:16
|
作者
D'Andrea, Timothy M. [1 ]
Zhang, Xu [1 ,2 ]
Jochnowitz, Evan B. [1 ,3 ]
Lindeman, T. G. [4 ]
Simpson, C. J. S. M. [5 ]
David, Donald E. [1 ,6 ]
Curtiss, Thomas J. [7 ]
Morris, John R. [8 ]
Ellison, G. Barney [1 ]
机构
[1] Univ Colorado, Dept Chem & Biochem, Boulder, CO 80309 USA
[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
[3] Univ Basel, Inst Phys Chem, CH-4056 Basel, Switzerland
[4] Colorado Coll, Dept Chem, Colorado Springs, CO 80903 USA
[5] Univ Oxford, Phys Chem Lab, Oxford OX1 3QZ, England
[6] Univ Colorado, Dept Chem & Biochem, Integrated Inst Design Facil, CIRES, Boulder, CO 80309 USA
[7] Aerosp Corp, Los Angeles, CA 90009 USA
[8] Virginia Tech, Dept Chem, Blacksburg, VA 24061 USA
来源
JOURNAL OF PHYSICAL CHEMISTRY B | 2008年 / 112卷 / 02期
关键词
D O I
10.1021/jp7096108
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have studied the oxidation of self-assembled monolayers (SAMs) of alkanes and alkenes with a thermal beam of OH radicals. The target films were produced by bonding alkane thiols and alkene thiols to a gold surface and the SAMs are mounted in a vacuum chamber at a base pressure of 10(-9) Torr. Hydroxyl radicals were produced by a corona discharge in an Ar/H2O2/water mixture. The resultant molecular beam was scanned by an electrostatic hexapole and the OH radicals [4 (+/- 1) x 10(11) OH radicals cm(-2) sec(-1)] were focused onto the target SAM. All of the hydroxyl radicals impinging on the SAM surface are rotationally (J '' <= 5/2) cold. The vibrational temperature of the radicals is estimated to be 1700-3400 K which implies that between 5% and 22% of the hydroxyl radical beam is OH upsilon-1 and the remainder (95% to 78%) is OH upsilon=vertical bar. The collision energy of the beam with the SAM is 333 cm(-1) corresponding to a 485 K thermal beam. We employed reflection/ absorption infrared spectroscopy (RAIRS) to monitor the reactivity of OH with an alkane and an alkene SAM. RAIRS demonstrated that a 10 min dose of OH radicals largely destroys the CH3- groups at the interface. This corresponds to a deposition of 2.4 x 10(14) OH cm(-2) or about 60% of the SAM monolayer. Oxidation of an undec-10-ene-1-thiol (HS(CH2)(9)HC = CH2) SAM with OH radicals proceeded more quickly with all the terminal alkenes, -CH = CH2, eliminated within 5 min following deposition of 1.2 x 10(14) radicals. We believe that the OH radicals initiate a radical-induced polymerization of the alkene film.
引用
收藏
页码:535 / 544
页数:10
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