High-irradiance degradation tests on concentrator GaAs solar cells

被引:18
|
作者
Rey-Stolle, I [1 ]
Algora, C [1 ]
机构
[1] UPM, Inst Energia Solar, ETSI Telecommun, Madrid 28040, Spain
来源
PROGRESS IN PHOTOVOLTAICS | 2003年 / 11卷 / 04期
关键词
concentrator solar cells; III-V semiconductors; degradation;
D O I
10.1002/pip.487
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The present work summarises the results of an experiment of light-soaking high-concentrator MOVPE-grown GaAs solar cells under monochromatic light (808 nm). The irradiance level was set so that the short-circuit current obtained was 1100 times that produced with the AM1.5D spectrum at 1 kW/m(2). This test caused no morphological changes in the devices. The main phenomenon discovered has been a slight increase with time of the reverse current I-02. This increase is analogous to that observed in similar degradation experiments based on high forward currents. In general, the results of these tests show that the drop in performance is very limited, supporting the idea that concentrator GaAs solar cells are rugged devices, capable of achieving long lifetimes infield operation. Copyright (C) 2003 John Wiley Sons, Ltd.
引用
收藏
页码:249 / 254
页数:6
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