Reduced radiative currents from GaAs/InGaAs and AlGaAs/GaAs p-i-n quantum well devices

被引：0

作者：

Nelson, J ^{[1
]}

Barnes, J ^{[1
]}

Ekins-Daukes, N ^{[1
]}

Barnham, KWJ ^{[1
]}

Kluftinger, B ^{[1
]}

Tsui, ESM ^{[1
]}

Foxon, CT ^{[1
]}

Cheng, TS ^{[1
]}

Roberts, JS ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Solid State Expt Grp, London SW7 2BZ, England

来源：

1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Calibrated electroluminescence spectra of GaAs/InGaAs and AlGaAs/GaAs single and double quantum well (QW) p-i-n devices, at various temperatures (200-300K) and applied biases (V-app = 0.8-1.5V), have been compared to theory to extract the quasi-Fermi level separation, Delta phi(f), in the QWs and where possible in the host material. Emission from the host material for the GaAs/InGaAs cell is well fitted with Delta phi(f) = V-app at all biases and temperatures. In contrast, emission from the QW in both GaAs/InGaAs and AlGaAs/GaAs cases requires a value of Delta phi(f) which is a few tens of meV less than V-app. We attribute the variations in Delta phi(f) to irreversible thermally assisted escape from the QWs and detail some preliminary results from double QW samples.

引用

页码：413 / 416

页数：4

共 50 条

[31] Development of GaAs/AlGaAs quantum well structures providing a resonant tunneling regime in an electric field of p-i-n junction
Nagaraja, K. K.
Telenkov, M. P.
Kazakov, I. P.
Savinov, S. A.
Mityagin, Yu A.
MATERIALS TODAY-PROCEEDINGS, 2016, 3 (08) : 2744 - 2747
[32] PICOSECOND TIME-RESOLVED MEASUREMENTS OF ELECTROABSORPTION IN AN INGAAS/GAAS MULTIPLE QUANTUM-WELL P-I-N MODULATOR
MAHGEREFTEH, D
YANG, CM
CHEN, L
HU, KZ
CHEN, W
GARMIRE, E
MADHUKAR, A
APPLIED PHYSICS LETTERS, 1992, 61 (21) : 2592 - 2594
[33] Direct determination of the piezoelectric field in (111) strained InGaAs/GaAs multiple quantum well p-i-n structures by photoreflectance
Dickey, S.A.
Majerfeld, A.
Sanchez-Rojas, J.L.
Sacedon, A.
Munoz, E.
Sanz-Hervas, A.
Aguilar, M.
Kim, B.W.
Microelectronic Engineering, 1998, 43-44 : 171 - 177
[34] Direct determination of the piezoelectric field in (111) strained InGaAs/GaAs multiple quantum well p-i-n structures by photoreflectance
Dickey, SA
Majerfeld, A
Sanchez-Rojas, JL
Sacedon, A
Munoz, E
Sanz-Hervas, A
Aguilar, M
Kim, BW
MICROELECTRONIC ENGINEERING, 1998, 43-4 : 171 - 177
[35] HIGH-QUALITY (111)B GAAS, ALGAAS, ALGAAS/GAAS MODULATION DOPED HETEROSTRUCTURES AND A GAAS/INGAAS/GAAS QUANTUM-WELL
CHIN, A
MARTIN, P
HO, P
BALLINGALL, J
YU, TH
MAZUROWSKI, J
APPLIED PHYSICS LETTERS, 1991, 59 (15) : 1899 - 1901
[36] Ultrafast cross-well carrier transport in a strained multiple-quantum-well InGaAs-GaAs p-i-n modulator
Wang, HS
Effenberger, FJ
LiKamWa, P
Miller, A
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (02) : 192 - 197
[37] BARRIER WIDTH DEPENDENCE OF LEAKAGE CURRENTS IN INGAAS/GAAS MULTIPLE QUANTUM-WELL P-I-N-DIODES
DAVID, JPR
GREY, R
PATE, MA
CLAXTON, PA
WOODHEAD, J
JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (04) : 295 - 297
[38] A MONOLITHICALLY INTEGRATED ALGAAS/GAAS P-I-N/FET PHOTORECEIVER BY MOCVD
MIURA, S
WADA, O
HAMAGUCHI, H
ITO, M
MAKIUCHI, M
NAKAI, K
SAKURAI, T
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 375 - 376
[39] Radiative efficiency of InGaAs/InGaAsP/GaAs quantum well lasers
Tsvid, G.
Kirch, J.
Mawst, L. J.
Kanskar, M.
Cai, J.
Arif, R. A.
Tansu, N.
Smowton, P. M.
Blood, P.
2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2007, : 313 - +
[40] SPECTRAL AND TEMPORAL CHARACTERISTICS OF ALGAAS/GAAS SUPERLATTICE P-I-N PHOTODETECTORS
LARSSON, A
YARIV, A
TELL, R
MASERJIAN, J
ENG, ST
APPLIED PHYSICS LETTERS, 1985, 47 (08) : 866 - 868

← 1 2 3 4 5 →