High-Q bulk micromachined silicon cavity resonator at Ka-band

被引：20
|
作者：
Stickel, M [1 ]
Eleftheriades, GV [1 ]
Kremer, P [1 ]
机构：
[1] Univ Toronto, Edward S Rogers Sr Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
来源：
ELECTRONICS LETTERS | 2001年 / 37卷 / 07期
关键词：
D O I：
10.1049/el:20010313
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel hulk silicon micromachining technique for fabricating millimetre-wave waveguide components is presented. This technique enables the formation or Jeep three-dimensional stacked structures of almost constant cross-section as well as post wafer-bonding metallisation that reduces thr effects uf air gaps and contact resistances. With these innovations it is possible to realise high-Q devices with low-cost fabrication. Simulated and measured results For a 30GHz silicon cavity resonator are presented.
引用
收藏
页码：433 / 435
页数：3
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