Optical switch-on of silicon carbide thyristor

被引：0
|
作者：
Levinshtein, ME
Ivanov, PA
Agarwal, AK
Palmour, JW
机构：
[1] AF Ioffe Phys Tech Inst, RU-194021 St Petersburg, Russia
[2] Cree Inc, Durham, NC 27703 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS - 2002 | 2002年 / 433-4卷
关键词：
optical triggering; silicon carbide; thyristor;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optical switch-on of silicon carbide thyristors has been demonstrated for the first time. A 2.6 kV 4H-SiC thyristor was switched on by light pulse of an ultraviolet laser with wavelength lambda = 337 nm (photon energy hv = 3.68 eV). The threshold energy of the light pulse, required to turn the thyristor on, was J(th) approximate to 0.75 muJ. At light pulse energy of J = 15 muJ the thyristor is switched on extremely fast. The characteristic current rise time was only 3 ns, i.e. 30 times shorter than that in the conventional gate-controlled mode.
引用
收藏
页码：851 / 854
页数：4
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