An Improved Process for Fabricating High-Mobility Organic Molecular Crystal Field-Effect Transistors

被引：0
|
作者：
Bell, Laurence L. [1 ]
Micolich, Adam P. [1 ]
Hamilton, Alex R. [1 ]
机构：
[1] Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia
来源：
2006 INTERNATIONAL CONFERENCE ON NANOSCIENCE AND NANOTECHNOLOGY, VOLS 1 AND 2 | 2006年
基金：
澳大利亚研究理事会;
关键词：
organic electronics; field-effect transistor;
D O I：
暂无
中图分类号：
R318 [生物医学工程];
学科分类号：
0831 ;
摘要：
In this paper we present an alternate way of making elastomer transistor stamps and high-mobility organic field-effect transistors. In particular, we have removed the need to prepare and use a silanised Si wafer for curing the stamps, and the need to handle a fragile micron-thickness polydimethylsiloxane (PDMS) film and laminate it, bubble free, against the PDMS transistor stamp. We find that despite the altered design, rougher PDMS surface, and lamination and measurement in air, we still achieve mobilities of order 10 cm(2)/Vs. Our device shows hole conduction with a threshold voltage of - 9.1 V. This corresponds to a doping concentration of 1.4 x 10(10) cm(-2), likely due to gaseous species such as oxygen adsorbed at the rubrene/PDMS interface.
引用
收藏
页码：658 / +
页数：2
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