Development of the technique of laser diagnostics of solids under pulsed optical irradiation

A technique based on the recording of a Fraunhofer diffraction pattern and allowing studies of structural and phase transitions in an ion-implantion-doped semiconductor layer with a high time resolution simultaneously with sample-temperature measurements is described. For this purpose, two measuring diffraction gratings-phase and amplitude-are preliminarily formed on the surface of a silicon plate. Solid-phase recrystallization and melting processes were studied using the kinetics of disappearance and appearance of diffraction peaks from the amplitude grating. The sample temperature was monitored by the deviation of the diffraction angle of a probing laser beam from the phase diffraction grating caused by a change in the grating period resulting from its thermal expansion.