Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by reduced pressure chemical vapour deposition

被引：1

作者：

Myronov, M. ^{[1
]}

Shah, V. A. ^{[1
]}

Dobbie, A. ^{[1
]}

Liu, Xue-Chao ^{[1
]}

Nguyen, Van H. ^{[1
]}

Leadley, D. R. ^{[1
]}

Parker, E. H. C. ^{[1
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3 | 2011年 / 8卷 / 03期

关键词：

strained Si; RP-CVD; SiGe; virtual substrate; HETEROSTRUCTURES; SI0.6GE0.4; MOBILITY; DEFECTS;

D O I：

10.1002/pssc.201000255

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Bi-axial tensile strained Si epilayers with extremely high lattice mismatch strain up to 2.13% were grown from a disilane (Si2H6) precursor on Si1-xGex/Si(100) VSs by Reduced Pressure Chemical Vapour Deposition. We discuss the conditions under which fully strained Si epilayers of the required thickness can be grown. By demonstrating a fully strained 23 nm Si layer on a fully relaxed Si0.45Ge0.55(100) VS, this work indicates the potential for realizing high performance s-Si n-and pMOSFETs on standard Si(100) substrates. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：952 / 955

页数：4

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