Effects of hydrogen annealing on the electrical properties of SrBi2Nb2O9 thin films

被引：6
|
作者：
Kim, IS [1 ]
Kim, YT
Kim, SI
Choi, IH
机构：
[1] Korea Inst Sci & Technol, Semicond Devices Lab, Seoul 130650, South Korea
[2] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
[3] Korea Inst Sci & Technol, Semicond Devices Lab, Seoul 130650, South Korea
[4] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 43卷 / 05期
关键词：
ferroelectric thin film; SiBi2Nb2O9; hydrogen annealing; Curie temperature; interface trap;
D O I：
10.3938/jkps.43.850
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have investigated the effects of hydrogen annealing at the Curie temperature (435 degreesC) on Pt/SrBi2Nb2O9(SBN)/Si (MFS) and Pt/SBN/Pt (MFM) structures. Although the Curie temperature is too low to cause any phase transformation in the SBN film, the microstructure and the electrical characteristics of the MFS and the MFM structures are obviously damaged by the effects of hydrogen annealing. However, the interface trap density is relatively decreased from 3.3 x 10(11) to 1.58 X 10(11)/cm(2) eV after hydrogen annealing at 435 degreesC. After a recovery annealing process at a higher temperature in an oxygen ambient, the microstructure and the electrical properties of the MFM and the MFS structures are completely recovered.
引用
收藏
页码：850 / 853
页数：4
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