Photoluminescence of SiO2/SiNx/SiO2/Si Structures with Off-Stoichiometric Silicon Nitride Layers

被引：0

作者：

Romanov, I. A. ^{[1
]}

Vlasukova, L. A. ^{[1
]}

Parkhomenko, I. N. ^{[1
]}

Komarov, F. F. ^{[3
]}

Milchanin, O., V ^{[3
]}

Makhavikou, M. A. ^{[3
]}

Mudryi, A., V ^{[2
]}

Zhivulko, V. D. ^{[2
]}

Kovalchuk, N. S. ^{[4
]}

Krekoten, N. A. ^{[4
]}

Lu, H-L ^{[5
]}

机构：

[1] Belarusian State Univ, Minsk, BELARUS

[2] Natl Acad Sci Belarus, Sci & Pract Mat Res Ctr, Minsk, BELARUS

[3] AN Sevchenko Inst Appl Phys Problems, Minsk, BELARUS

[4] Joint Stock Co Integral, Minsk, BELARUS

[5] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai, Peoples R China

来源：

PROCEEDINGS OF THE 2018 IEEE 8TH INTERNATIONAL CONFERENCE NANOMATERIALS: APPLICATION & PROPERTIES (NAP-2018) | 2018年

基金：

国家重点研发计划;

关键词：

silicon nitride; photoluminescence; spectral ellipsometry; absorption edge; rapid thermal annealing; DEPOSITION; FILMS;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Two triple-layered SiO2/SiNx/SiO2 structures with Si-rich and N-rich silicon nitride active layers were fabricated on p-type Si-substrates by chemical vapour deposition. The different stoichiometry of SiNx layer (x = 0.9 and x = 1.4) was obtained by changing the ratio of the SiH2Cl2/NH3 flow rates during deposition of silicon nitride active layer (8/1 and 1/8, respectively). The spectroscopic ellipsometry measurements show the refractive index as well as absorbance could be controlled by x adjusting. As a result, it could tune the emission colour of the deposited structures by changing their chemical composition. The structures with Si-rich and N-rich SiNx active layers emit in the red (1.9 eV) and blue (2.6 eV) spectral ranges, respectively. The PL intensities of the different structures with Si-rich and N-rich SiNx are comparable. Annealing effect on PL intensity is differed for structures with Si-rich and N-rich SiNx. The origin of PL and the effect of annealing treatment have been discussed.

引用

页数：4

共 50 条

[31] Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices
Heng, CL
Zhang, BR
Qiao, YP
Ma, ZC
Zong, WH
Qin, GG
PHYSICA B, 1999, 270 (1-2): : 104 - 109
[32] Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices
Heng, C.L.
Zhang, B.R.
Qiao, Y.P.
Ma, Z.C.
Zong, W.H.
Qin, G.G.
Physica B: Condensed Matter, 1999, 270 (1-2): : 104 - 109
[33] The electroluminescence of SiO2 layers with excess silicon
Baraban, AP
Egorov, DV
Petrov, YV
Miloglyadova, LV
TECHNICAL PHYSICS LETTERS, 2004, 30 (01) : 40 - 41
[34] The electroluminescence of SiO2 layers with excess silicon
A. P. Baraban
D. V. Egorov
Yu. V. Petrov
L. V. Miloglyadova
Technical Physics Letters, 2004, 30 : 40 - 41
[35] DIELECTRIC BREAKDOWN IN SIO2 LAYERS ON SILICON
FRITZSCHE, C
ZEITSCHRIFT FUR ANGEWANDTE PHYSIK, 1967, 24 (01): : 48 - +
[36] Nuclear reaction analysis of hydrogen in the buried SiO2 layer of Si/SiO2/Si structures
Krauser, J
Revesz, AG
Hughes, HL
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2001, 296 (1-2) : 143 - 145
[37] Influence of interfaces on crystal growth of Si in SiO2/a-Si/SiO2 layered structures
Tagami, T
Wakayama, Y
Tanaka, SI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (6B): : L734 - L736
[38] Influence of interfaces on crystal growth of Si in SiO2/a-Si/SiO2 layered structures
Tagami, Takashi
Wakayama, Yutaka
Tanaka, Shun-ichiro
Japanese Journal of Applied Physics, Part 2: Letters, 1997, 36 (06):
[39] Blue and red luminescence from Si ion-irradiated SiO2/Si/SiO2 layers
Son, JH
Kim, TG
Shin, SW
Kim, HB
Lee, WS
Im, S
Song, JH
Whang, CN
Chae, KH
OPTICAL MATERIALS, 2001, 17 (1-2) : 125 - 129
[40] Light-emitting properties of Si-ion-irradiated SiO2/Si/SiO2 layers
Kim, HB
Son, JH
Whang, CN
Chae, KH
Lee, WS
Im, S
Kim, SO
Woo, JJ
Song, JH
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2000, 37 (04) : 466 - 470

← 1 2 3 4 5 →