We show that it is possible to construct low-noise single-electron transistors (SETs) using free-standing multiwalled carbon nanotubes. The 1/f(alpha)-noise of our devices, 6x10(-6) e/root Hz at 45 Hz, is close in the performance to the best metallic SETs of today. (C) 2001 American Institute of Physics.
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Moscow MV Lomonosov State Univ, Fac Chem, Moscow 119991, Russia
Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow 117901, RussiaMoscow MV Lomonosov State Univ, Fac Chem, Moscow 119991, Russia
Savilov, S. V.
Ivanov, A. S.
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Moscow MV Lomonosov State Univ, Fac Chem, Moscow 119991, RussiaMoscow MV Lomonosov State Univ, Fac Chem, Moscow 119991, Russia
Ivanov, A. S.
Chernyak, S. A.
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Moscow MV Lomonosov State Univ, Fac Chem, Moscow 119991, Russia
Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow 117901, RussiaMoscow MV Lomonosov State Univ, Fac Chem, Moscow 119991, Russia
Chernyak, S. A.
Kirikova, M. N.
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Moscow MV Lomonosov State Univ, Fac Chem, Moscow 119991, RussiaMoscow MV Lomonosov State Univ, Fac Chem, Moscow 119991, Russia
Kirikova, M. N.
Ni, J.
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Soochow Univ, Coll Phys Optoelect & Energy, Suzhou, Jiangsu, Peoples R ChinaMoscow MV Lomonosov State Univ, Fac Chem, Moscow 119991, Russia
Ni, J.
Lunin, V. V.
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Moscow MV Lomonosov State Univ, Fac Chem, Moscow 119991, Russia
Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow 117901, RussiaMoscow MV Lomonosov State Univ, Fac Chem, Moscow 119991, Russia