Role of irradiation-induced defects on SiC dissolution in hot water

被引：30
|
作者：
Kondo, Sosuke [1 ]
Mouri, Shinichiro [1 ]
Hyodo, Yoshihiro [2 ]
Hinoki, Tatsuya [1 ]
Kano, Fumihisa [2 ]
机构：
[1] Kyoto Univ, Inst Adv Energy, Uji, Kyoto 6110011, Japan
[2] Toshiba Co Ltd, Power & Ind Syst Res & Dev Ctr, Yokohama, Kanagawa 2358523, Japan
来源：
CORROSION SCIENCE | 2016年 / 112卷
关键词：
Ceramic; SEM; Ion implantation; High temperature corrosion; Reactor conditions; IMPLANTED SILICON-CARBIDE; ELECTRON-SPIN-RESONANCE; HYDROTHERMAL CORROSION; FORCE MICROSCOPY; SEMICONDUCTORS; TEMPERATURE; BEHAVIOR;
D O I：
10.1016/j.corsci.2016.08.007
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An enhancement of the dissolution of high-purity 3C-SiC in hot water (320 degrees C, 20 MPa: relevant to the light-water reactor coolant condition) is demonstrated after 5.1 MeV Si-ion irradiation. Optical spectrometry and Kelvin force microscopy revealed the creation of interband-defect localized states within the bandgap. The dissolution rate was found to be dependent on the irradiation fluence, irradiation-induced volume expansion, and the photoluminescence quenching. An annealing study showed prevention of irradiation-enhanced dissolution with the recovery of most defects. These results show that the dissolution rates of irradiated SiC are increased with the population of irradiation-induced defects. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：402 / 407
页数：6
相关论文
共 50 条
  • [31] IRRADIATION-INDUCED ESR ACTIVE DEFECTS IN SIMOX STRUCTURES
    STESMAN, A
    DEVINE, R
    REVESZ, AG
    HUGHES, H
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (06) : 2008 - 2012
  • [32] In situ probing of the evolution of irradiation-induced defects in copper
    Li, N.
    Hattar, K.
    Misra, A.
    JOURNAL OF NUCLEAR MATERIALS, 2013, 439 (1-3) : 185 - 191
  • [33] THE INTERACTION BETWEEN DISLOCATIONS AND IRRADIATION-INDUCED DEFECTS IN METALS
    SOSIN, A
    ACTA CRYSTALLOGRAPHICA, 1960, 13 (12): : 1131 - 1131
  • [34] Process- and irradiation-induced defects in silicon devices
    Claeys, C
    Simoen, E
    Vanhellemont, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 377 (2-3): : 244 - 257
  • [35] IRRADIATION-INDUCED DEFECTS IN PARA-TYPE GAAS
    STIEVENARD, D
    BODDAERT, X
    BOURGOIN, JC
    PHYSICAL REVIEW B, 1986, 34 (06): : 4048 - 4058
  • [36] Characterisation of irradiation-induced defects in ZnO single crystals
    Prochazka, I.
    Cizek, J.
    Lukac, F.
    Melikhova, O.
    Valenta, J.
    Havranek, V.
    Anwand, W.
    Skuratov, V. A.
    Strukova, T. S.
    INTERNATIONAL WORKSHOP ON POSITRON STUDIES OF DEFECTS 2014, 2016, 674
  • [37] A STUDY OF ELECTRON IRRADIATION-INDUCED DEFECTS IN SI LAYERS
    WU, FM
    LAI, QJ
    SHEN, B
    ZHOU, GQ
    CHINESE PHYSICS, 1986, 6 (04): : 936 - 940
  • [38] Ions irradiation-induced defects study of copper nanowires
    Honey, Shehla
    Aisida, Samson O.
    Jan, Tariq
    Ahmad, Ishaq
    Mehmood, Iram
    Zhao, Ting-kai
    Mahmood, Arshad
    Malik, Maaza
    RADIATION PHYSICS AND CHEMISTRY, 2020, 171
  • [39] Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET
    Niskanen, K.
    Kettunen, H.
    Soderstrom, D.
    Rossi, M.
    Jaatinen, J.
    Javanainen, A.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2023, 70 (08) : 1838 - 1843
  • [40] EXELFS/ELNES study of electron irradiation-induced oxidation of α-SiC
    Muto, S
    Sugiyama, H
    Kimura, T
    Tanabe, T
    Maruyama, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 218 : 117 - 122
12345