LVDCSL: A high fan-in, high-performance, low-voltage differential current switch logic family

被引:6
|
作者
Somasekhar, D [1 ]
Roy, K [1 ]
机构
[1] Purdue Univ, Dept Elect Engn, W Lafayette, IN 47906 USA
关键词
complementary metal-oxide-semiconductor (CMOS); design; dynamic logic circuit; high-performance; low-voltage; low-power dissipation;
D O I
10.1109/92.736130
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents a low voltage differential current switch logic (LVDCSL) gate capable of achieving high performance for large fan-in gates. High fan-in is enabled by using a large height predischarged N channel metal-oxide-semiconductor (NMOS) trees. The power penalty of an increased number of internal nodes in the gate is mitigated by restricting their voltage swings. The salient features of this low-voltage DCSL family are high speed for high fan-in large stack height NMOS trees, low power due to restricted internal voltage swings, simple interface to static complementary metal-oxide-semiconductor (CMOS), and a latching nature which locks out inputs once outputs are evaluated. Results show that LVDCSL is capable of working at under 2 V in a 0.35-mu CMOS process while being faster than comparable Domino gates. At the same time total power consumption is reduced. LVDCSL achieves 40% delay improvement and 22% power reduction in comparison with dual rail Domino gates for 8 bit carry look-ahead circuits. Results for the critical path of an adder reveal that the complexity afforded by the gate, effectively decreases the number of logic levels and leads to improved performance.
引用
收藏
页码:573 / 577
页数:5
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