Photoacoustic and photoluminescence studies of H+ ion-implanted n-GaAs

被引：2
|
作者：
Srinivasan, R
Sanjeeviraja, C
Ramachandran, K [1 ]
机构：
[1] Madurai Kamaraj Univ, Sch Phys, Madurai 625021, Tamil Nadu, India
[2] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
[3] Thiagarajar Coll, Dept Phys, Madurai 625009, Tamil Nadu, India
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 03期
关键词：
D O I：
10.1002/pssa.200406931
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The surface of silicon-doped GaAs (100) grown by the vertical Bridgman method has been implanted with H+ ions at 30 keV for various doses from 10(14) to 10(17) cm(-2) and studied using photoacoustic and photoluminescence spectroscopy to understand the effects of hydrogen ion implantation on GaAs:Si. The results are compared with Raman measurements. All the measurements confirm the sign change of charge carriers at a dose of 10(15) cm(-2). (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：419 / 424
页数：6
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