Topological Crystalline Insulator Pb1-xSnxSe Nanowires with {100} Facets

被引:12
|
作者
Wang, Qisheng [1 ]
Safdar, Muhammad [1 ]
Wang, Zhenxing [1 ]
Zhan, Xueying [1 ]
Xu, Kai [1 ]
Wang, Fengmei [1 ]
He, Jun [1 ]
机构
[1] Natl Ctr Nansci & Technol, Beijing, Peoples R China
基金
北京市自然科学基金; 中国国家自然科学基金;
关键词
SNTE; GROWTH; NANOSTRUCTURES; INVERSION; STATES;
D O I
10.1002/smll.201403159
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Surface states properties of topological crystalline insulator Pb1-xSnxSe are strongly dependent on crystallographic plane orientation. Rectangular prismatic PbxSn1-xSe nanowires and nanoplates are grown with distinct {100} surfaces on mica sheets. infstrate surface chemical properties are found to be the critical factors that affect the vapor deposition process and final shapes of Pb1-xSnxSe nanostructures. © 2014 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:2019 / 2025
页数:7
相关论文
共 50 条
  • [31] PHASE STUDIES OF PB1-XSNXSE ALLOYS
    WOOLLEY, JC
    BEROLO, O
    MATERIALS RESEARCH BULLETIN, 1968, 3 (05) : 445 - &
  • [32] Detection of highly conductive surface electron states in topological crystalline insulators Pb1-xSnxSe using laser terahertz radiation
    Egorova, S. G.
    Chernichkin, V. I.
    Ryabova, L. I.
    Skipetrov, E. P.
    Yashina, L. V.
    Danilov, S. N.
    Ganichev, S. D.
    Khokhlov, D. R.
    SCIENTIFIC REPORTS, 2015, 5
  • [33] EPITAXIAL LAYERS OF PB1-XSNXTE AND PB1-XSNXSE
    SHOTOV, AP
    DAVARASHVILI, OI
    INORGANIC MATERIALS, 1977, 13 (04) : 501 - 503
  • [34] Weak antilocalization beyond the fully diffusive regime in Pb1-xSnxSe topological quantum wells
    Wang, Jiashu
    Liu, X.
    Bunker, C.
    Riney, L.
    Qing, B.
    Bac, S. K.
    Zhukovskyi, M.
    Orlova, T.
    Rouvimov, S.
    Dobrowolska, M.
    Furdyna, J. K.
    Assaf, B. A.
    PHYSICAL REVIEW B, 2020, 102 (15)
  • [35] Photodiodes based on Pb1-xSnxSe epitaxial films
    Jalilova, Ch. D.
    Aliyev, A. A.
    Faradjev, N. V.
    Alekperova, Sh. M.
    19TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES, 2007, 6636
  • [36] ELECTRICAL PROPERTIES OF PB1-XSNXSE SEMICONDUCTING ALLOYS
    HOFF, GF
    DIXON, JR
    SOLID STATE COMMUNICATIONS, 1972, 10 (05) : 433 - &
  • [37] Discrimination of Conductive Surface Electron States by Laser Terahertz Radiation in PbSe-A Base for Pb1-xSnxSe Topological Crystalline Insulators
    Egorova, Svetlana G.
    Chernichkin, Vladimir I.
    Dudnik, Anna O.
    Kasiyan, Vladimir A.
    Chernyak, Leonid
    Danilov, Sergey N.
    Ryabova, Ludmila I.
    Khokhlov, Dmitry R.
    IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 2015, 5 (04) : 659 - 664
  • [38] CURRENT NOISE IN PB1-XSNXSE EPITAXIAL-FILMS
    FARHAT, A
    ZEMEL, JN
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 309 - 309
  • [39] Dirac Landau Level Spectroscopy in Pb1-xSnxSe and Pb1-xSnxTe across the Topological Phase Transition: A Review
    Phuphachong, Thanyanan
    Assaf, Badih A.
    Volobuev, Valentine V.
    Bauer, Guenther
    Springholz, Gunther
    de Vaulchier, Louis-Anne
    Guldner, Yves
    CRYSTALS, 2017, 7 (01):
  • [40] TO QUESTION OF NONRADIATED RECOMBINATION IN Pb1-xSnxSe LASER DIODES
    Gureev, D. M.
    VESTNIK SAMARSKOGO GOSUDARSTVENNOGO TEKHNICHESKOGO UNIVERSITETA-SERIYA-FIZIKO-MATEMATICHESKIYE NAUKI, 2008, (01): : 178 - 179