On the prediction of geometry-dependent floating-body effect in SOI MOSFETs

被引：1

作者：

Su, P ^{[1
]}

Lee, W ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 07期

关键词：

body source built-in potential lowering; floating-body effect; silicon-on-insulator (SOI) CMOS; threshold voltage; partially depleted (PD); fully depleted (FID);

D O I：

10.1109/TED.2005.850626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This brief demonstrates that, through the perspective of body-source built-in potential lowering (Delta V-bi), the geometry-dependent floating-body effect in state-of-the-art silicon-on-insulator (SOI) MOS-FETs can be explained and predicted by the geometry dependence of threshold voltage (V-T). The correlation between Delta V-bi and V-T unveiled in this brief is the underlying mechanism responsible for the coexistence of partially depleted and fully depleted devices in a single SOI chip.

引用

页码：1662 / 1664

页数：3

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